发明名称 |
Production of epitaxial layer for dynamic random access memory comprises preparing substrate having single crystalline and insulated regions, growing epitaxial layer on single crystalline region and partially removing epitaxial layer |
摘要 |
Production of an epitaxial layer comprises: preparing substrate (105) having a single crystalline region (107) and an electrically insulated region (108); growing epitaxial layer (245) on the single crystalline region; and partially removing the epitaxial layer. Production of an epitaxial layer comprises: preparing substrate (105) having a single crystalline region (107) and an electrically insulated region (108); growing epitaxial layer (245) on the single crystalline region, in which the electrically insulated region is partially grown laterally by the epitaxial layer and forms an epitaxial closing joint (275); and partially removing the epitaxial layer above the electrically insulated region so that the epitaxial closing joint is partially removed. Preferred Features: The epitaxial layer is removed by anisotropic etching. The single crystalline region consists of silicon and the electrically insulated region consists of silicon oxide.
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申请公布号 |
DE19941147(A1) |
申请公布日期 |
2001.03.22 |
申请号 |
DE1999141147 |
申请日期 |
1999.08.30 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
TEMMLER, DIETMAR;BENZINGER, HERBERT;KARCHER, WOLFRAM;PUSCH, CATHARINA;SCHREMS, MARTIN;FAUL, JUERGEN |
分类号 |
H01L21/20;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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