Schottky diode production method involves setting up semiconductor substrate, mounting epitaxial layer followed by doping material on substrate, and depositing metal layer on doping material

摘要

An epitaxial layer (15) of a selectable conductivity type followed by a selectable concentration of a doping material of a certain conductivity type is mounted on the substrate. A metal layer is deposited to form a layer metal silicide on the doping material. A barrier-modifying layer between the cathode and anode increases/decreases the threshold turn-on potential depending on whether the diode transition is formed with Titanium or Platinum.