PRODUCTION OF METAL OXIDE SLURRY FOR SEMICONDUCTOR DEVICE CMP

摘要

PROBLEM TO BE SOLVED: To acquire high purity metal oxide slurry narrow and uniform in particle size distribution and containing almost no huge particles of 1μm or larger causing aμ-scratch on a polished surface. SOLUTION: The generation of the huge particles (of 1μm or larger particle size) to become the main cause of generating theμ-scratch is restrained or minimized by using two high pressure pumps 2, 2' to keep the pressure in a deconcentration chamber 3 constant in the case of accelerating a fluid current under the high pressure to deconcentrate it at an orifice. As the metal oxide, one or more ones selected from the group consisting of SiO2, CeO2, Al2O3 and ZrO2 and having 20-300 m2/g surface area are used.