| 摘要 |
PROBLEM TO BE SOLVED: To obtain a multi-channel IGBT, which can be further improved its on-state current density and latch-up breakdown strength. SOLUTION: N+ impurity regions 9a to 9c, P+ impurity regions 10a and 10b and gate electrodes 8a and 8b are respectively formed into an annular shape, in such a way as to encircle a P+ impurity region 10c. Moreover, p-type well regions, which are respectively formed selectively within the main surfaces of a gate oxide film 7 and an N-type drift layer 3, which are the base film and the base layer of the electrodes 8a and 8b, are also respectively formed in an annular shape so as to encircle the region 10c.
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