| 发明名称 |
METHOD OF MANUFACTURING THIN-FILM TRANSISTOR |
| 摘要 |
<p>All or a part of the thin films such as the silicon film, insulation film and conductive film are formed using liquid materials. The main method comprises forming a coating film by coating the liquid material on the substrate, and heat-treating the coating film for converting it into a desired thin film, thereby enabling the thin film transistor to be manufactured using a cheap manufacturing equipment. <IMAGE></p> |
| 申请公布号 |
EP1085578(A1) |
申请公布日期 |
2001.03.21 |
| 申请号 |
EP20000912944 |
申请日期 |
2000.03.29 |
| 申请人 |
SEIKO EPSON CORPORATION |
发明人 |
YUDASAKA, ICHIO;SHIMODA, TATSUYA;SEKI, SHUNICHI |
| 分类号 |
H01L21/336;C01G9/00;C01G45/00;C01G51/00;G02F1/1368;H01L21/208;H01L21/288;H01L21/316;(IPC1-7):H01L29/12 |
主分类号 |
H01L21/336 |
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