发明名称 LOW THERMAL EXPANSION COPPER ALLOY, SEMICONDUCTOR DEVICE USING THE SAME AND PRODUCTION OF LOW THERMAL EXPANSION COPPER ALLOY
摘要 PROBLEM TO BE SOLVED: To control the thermal expanding characteristics of the alloy to those of the material to be joined an to obtain excellent heat radiability by providing the surface of a copper alloy with a two phase metallic structure composed of copper and copper oxide with a layer of copper only. SOLUTION: Copper oxide is preferably composed of Cu2O. In the mother phase of copper and copper oxide grains having low thermal expanding characteristics composing the two phase metallic structure, by changing the volume ratio of copper oxide, the control of the thermal expanding characteristics is possible. Using a powdery mixture of copper powder and copper oxide powder, sinetring is executed in a reducing atmosphere, and a layer of copper only is formed on the surface side of the copper alloy with the two phase metallic structure whose inside is composed of copper and copper oxide by reduction. Or, using a powdery mixture of copper powder and copper oxide powder, press-sintering is executed, simultaneously, a board made of copper or a vessel made of copper arranged at the outside of the whole of the powdery mixture and the powdery mixture sintered body are joined to obtain a low thermal expansion copper alloy in which a layer of copper only is formed on the surface of the copper alloy having the two phase structure composed of copper and copper oxide.
申请公布号 JP2001073047(A) 申请公布日期 2001.03.21
申请号 JP19990251230 申请日期 1999.09.06
申请人 HITACHI METALS LTD 发明人 KUMAMOTO SHINGO;HOSODA SHIGEMI
分类号 B23K20/00;B32B15/01;C22C1/05;C22C9/00;(IPC1-7):C22C1/05 主分类号 B23K20/00
代理机构 代理人
主权项
地址