Magnetoresistive element and magnetic memory device

摘要

A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer (11)/a first ferromagnetic layer (12)/a first dielectric layer (13)/a second ferromagnetic layer (14)/a second dielectric layer (15)/a third ferromagnetic layer (16)/a second antiferromagnetic layer (17). The second ferromagnetic layer (14) that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni-Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer (12) and the third ferromagnetic layer (16).