发明名称 |
Method of making a semiconductor device having a grown polysilicon layer |
摘要 |
A partially formed semiconductor device includes a substrate, a first layer, a layer of polysilicon, and a grown layer of polysilicon. The first layer is positioned above at least a portion of the substrate. The layer of polysilicon is positioned above at least a portion of the first layer and has a first opening formed therein. The first opening has a first width that is defined by a plurality of sidewalls. The grown layer of polysilicon is positioned adjacent at least the plurality of sidewalls and the grown layer of polysilicon defines a second opening. The second opening has a second width with the second width being less than the first width. A method for partially forming a semiconductor device includes forming a process layer above at least a portion of a substrate. A layer of polysilicon is formed above at least a portion of the process layer. An opening is formed in the layer of polysilicon, and the opening has a first width that is defined by a plurality of sidewalls. The first width of the opening is reduced to a second width by growing a layer of polysilicon adjacent at least a portion of the sidewalls of the opening.
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申请公布号 |
US6204148(B1) |
申请公布日期 |
2001.03.20 |
申请号 |
US19990329843 |
申请日期 |
1999.06.11 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GARDNER MARK I.;FULFORD H. JIM;WRISTERS DERICK J. |
分类号 |
H01L21/336;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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