Self aligned contact pad in a semiconductor device and method for forming the same

摘要

Self-aligned contact pads in a semiconductor device and a method for forming the same are provided. These self-aligned contact pads can increase the upper surface of the contact pads to increase alignment margins. Portions of the gate mask are undercut, increasing the spaces between the gate structures. As a result, contact pads that are filled in these spaces have an increased upper surface contacting an electrical contact.