发明名称 |
Contact and deep trench patterning |
摘要 |
A method for patterning semiconductor components includes the steps of providing a substrate layer, the substrate layer having a dielectric layer formed thereon and a mask layer formed on the dielectric layer, the mask layer being selectively etchable relative to the dielectric layer, patterning the mask layer to form a first group of substantially parallel lines in the mask layer and patterning the dielectric layer to form rectangular holes therein down to the substrate layer. A semiconductor device in accordance with the invention is also included.
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申请公布号 |
US6204187(B1) |
申请公布日期 |
2001.03.20 |
申请号 |
US19990226434 |
申请日期 |
1999.01.06 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA, CORP. |
发明人 |
RUPP THOMAS S.;THOMAS ALAN;ZACH FRANZ |
分类号 |
H01L21/302;G03F7/40;H01L21/027;H01L21/28;H01L21/3065;H01L21/311;H01L21/762;H01L21/768;(IPC1-7):H01L21/311 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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