Single-transverse-mode 1xN multi-mode interferometer type semiconductor laser device

摘要

In a semiconductor laser device, a first section including a single-mode waveguide and a second section including N (N=2, 3 . . . ) single-mode waveguides are provided. A third section including a 1xN multi-mode interference type waveguide is provided and has an end connected to the first section and has another end connected to the second section.