发明名称 METHOD AND DEVICE FOR SEMICONDUCTOR THERMAL PROCESS
摘要 PROBLEM TO BE SOLVED: To rapidly cool an object after thermal process from an annealing temperature to a room temperature, related to a vertical diffusion device. SOLUTION: A preliminary chamber 21 where a boat 31 is quickly carried out for cooling a processed wafer W is directly coupled to the lower part of a thermal process chamber 11. Since it is provided outside a boat lifting mechanism 40, not inside of it, the volume of the preliminary chamber 21 is set to such minimum size as the boat 31 is housed. With an outside wall surface 21b of the preliminary chamber 21 wound with a refrigerant tube 29 for such cooling as no condensation follows, the wall surface of the preliminary chamber is prevented from rising in temperature due to the radiation energy from the wafer W. Inside the preliminary chamber 21, a nozzle 36 is provided to cool the wafer W by providing an N2 gas cooled to a room temperature or below between the thermally processed wafers W.
申请公布号 JP2001068425(A) 申请公布日期 2001.03.16
申请号 JP19990245069 申请日期 1999.08.31
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TAKAGAKI TETSUYA;IZUMI SHOICHIRO;MACHIDA JUNICHI;KATO TSUTOMU;MARUYAMA KUNIO
分类号 H01L21/22;(IPC1-7):H01L21/22 主分类号 H01L21/22
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