| 摘要 |
PROBLEM TO BE SOLVED: To prevent the occurrence of malfunctions and to improve reliability by providing a capacitor between the drain of a first field effect transistor(FET) and the gate of a second FET. SOLUTION: A differential noise obtained by inverting a differential noise inputted to the gate of an nMOS transistor 73 appears in the drain of the nMOS transistor 73, but this differential noise can be transmitted through a capacitor 145 to the gate of an nMOS transistor 74 as shown by an arrow 147. As a result, a noise to be mixed into a reference voltage system as a broken line 146 can be canceled by the differential noise transmitted through the capacitor 145 to the gate of the nMOS transistor 74. Thus, the malfunction caused by noises inputted to input circuits 57-61 when all the output of output circuits 77-81 are in high impedance states can be prevented, power consumption can be reduced and an output waveform can be optimized. |
