METHOD OF GROWING ZnO CRYSTAL, ZnO CRYSTAL STRUCTURE AND SEMICONDUCTOR DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method of growing ZnO crystal of favorable quality by reducing defects of ZnO crystal grown on a sapphire substrate with respect to ZnO crystal, a method of growing the same and a semiconductor device using the same. SOLUTION: This method includes steps of growing a low temperature growth ZnO layer 101 on a sapphire substrate S at a temperature lower than that for growing single crystal ZnO, thermally treating the low temperature growth ZnO layer at a temperature about the same as the growth temperature of a high temperature growth single crystal ZnO, which is higher than that of the low temperature growth ZnO and growing the high temperature growth single crystal ZnO layer 105 on the low temperature growth ZnO layer at a temperature higher than the growth temperature of the low temperature growth single crystal ZnO.