发明名称 |
SEMICONDUCTOR LASER DEVICE, OPTICAL DISK DEVICE, AND OPTICAL INTEGRATED DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To surely reduce noises, especially optical noises emitted from a nitride semiconductor laser device. SOLUTION: A nitride semiconductor laser device 1A is mounted with an element forming surface which is mounted facing to the top surface of a sub- mount 2 formed of insulating silicon carbide. An n-type InxGa1-xN spontaneous emission light-absorbing layer 15A having an energy gap which absorbs a spontaneous emission light emitted from an active layer, an n-type AlGaN clad layer 16 formed of n-type AlGaN for confinement of light which is generated in the active layer and also confinement of electrodes in the active layer, and an InyGa1-yN (0<y<=x<1) active layer 17 which generates recombined light by recombining confined electrodes and holes are formed in an element-forming region located on the under surfaces of the n-type contact layer 13. |
申请公布号 |
JP2001068784(A) |
申请公布日期 |
2001.03.16 |
申请号 |
JP20000021277 |
申请日期 |
2000.01.31 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
KUME MASAHIRO;KIDOGUCHI ISAO;BAN YUZABURO;MIYANAGA RYOKO;SUZUKI MASAKATSU |
分类号 |
H01L33/12;H01L33/32;H01L33/44;H01S5/20;H01S5/323 |
主分类号 |
H01L33/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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