| 摘要 |
PROBLEM TO BE SOLVED: To obtain a resist pattern having a satisfactory shape using exposure light having 140-160 nm for the wavelength. SOLUTION: A resist film 11, containing a base resin of the formula having >=40% transmittance to light having 140-160 nm wavelength in 200 nm thickness, is formed on a semiconductor substrate 10, exposed in terms of a pattern using a F2 excimer laser 13 and developed with an alkaline developing solution to form a objective resist pattern 14 made of an unexposed part 11b of the resist film 11. |
