| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor laser of a structure which is equipped with emission sources of laser beams of emission parts aligning in the direction perpendicular to the substrate, and obtained by a simple manufacturing process. SOLUTION: This semiconductor layer is provided with a first light-emission part 6 formed of a semiconductor laminate part composed of an active layer 3 determined by a first emission wavelength and pinched by clad layers 2 and 4 which have each a larger band gap than the active layer 3, being formed on a semiconductor substrate 1. A second light emission part 16 formed of a semiconductor laminate part composed of an active layer 13 determined by a second emission wavelength and pinched by clad layers 12 and 14 which have each a larger band gap than the active layer 13, being formed on the first light emission part 6 through the intermediately of a contact layer 5. The first light emission part 6 and the second light emission part 16 are formed in line with each other in the normal direction of the semiconductor substrate 1.
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