发明名称 FERAM CELL WITH INTERNAL OXYGEN SOURCE LAYER AND METHOD FOR OUTPUTTING OXYGEN
摘要 PURPOSE: A ferroelectric capacitor and a ferroelectric/CMOS integrated structure are provided to have high storage characteristics. CONSTITUTION: The structure comprises at least a ferroelectric material(22), a pair of electrodes(20, 24) contacting opposite surfaces of the ferroelectric material(20), and an oxygen source layer(26) contacting at least one of electrodes(22, 24).
申请公布号 KR20010020907(A) 申请公布日期 2001.03.15
申请号 KR20000028613 申请日期 2000.05.26
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CHARLES THOMAS BLACK;CYRIL KYABURA JR;GRILL ALFRED;DEBORA AN NEWMEYER;PRICER WILBUR DAVID;CATHERINE LYNN SEENGAA;THOMAS MAKKAROORU SHAW
分类号 H01L27/04;H01L21/02;H01L21/822;H01L21/8246;H01L27/10;H01L27/105;H01L27/115;(IPC1-7):H01L27/105 主分类号 H01L27/04
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