| 摘要 |
<p>A method is provided for determining an etch endpoint (855). The method includes collecting intensity data (820) representative of optical emission spectral wavelengths during a plasma etch process (810). The method further includes calculating Scores (845) from at least a portion of the collected intensity data (820) using at most first, second, third and fourth Principal Components derived from a model (835). The method also includes determining the etch endpoint (855) using Scores (845) corresponding to at least one of the first, second, third and fourth Principal Components as an indicator (835) for the etch endpoint (855).</p> |
