| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing thereof are provided to planarize a surface of an interlayer dielectric film by the CMP polishing and to remove a moisture attached to the surface of the interlayer dielectric film by applying the plasma annealing using an N2O gas. CONSTITUTION: A capacitor is fabricated by forming in sequence an upper electrode(25), a dielectric film(24) formed of ferroelectric material or high-dielectric material, and a lower electrode(23) on a semiconductor substrate(10). Then, an interlayer dielectric film is formed on the capacitor, planarized a surface of the interlayer dielectric film by the CMP polishing, and then removed a moisture attached to the surface of the interlayer dielectric film or a moisture contained in the interlayer dielectric film by applying the plasma annealing using an N2O gas. Then, a redeposited interlayer film is formed on the interlayer dielectric film.
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