Damascene process with anti-reflection coating

摘要

The present invention proposes a method for improving the damascene process window for metallization and utilizes an anti-reflective coating to increase the precision of the photolithography process. An inter-layer dielectric and an anti-reflective layer are formed in turn on a semiconductor substrate. The inter-layer dielectric is patterned to form the interconnection line regions. A conductive layer is then deposited on the semiconductor substrate and fills the interconnecting line regions. The chemical mechanical polish is performed to remove a portions of the conductive layer exceeding the interconnect line regions and simultaneously remove residual portion of said anti-reflective layer.