| 摘要 |
PURPOSE: An integrated memory and operation of memory is provided to perform in plural memory cells. CONSTITUTION: The integrated memory has bit lines(BLi), word lines(WLk), and memory cells(MC) arranged at intersections of plate electrode lines(PLi). In the first operation mode, a plate electrode line(PLi) is left at a plate electrode potential VPL of a fixed period of write-in access. In a second operation mode, the bit line is left at a plate electrode potential, on the other hand, a plate electrode line(PLi) takes the prescribed potential(VF) other than the plate electrode potential(VPL).
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