| 摘要 |
PURPOSE: A method for etching a metal layer of a semiconductor device is provided to etch the metal layer of the semiconductor device by using plasma formed by a helical resonator. CONSTITUTION: An oxide layer(32) is formed on a substrate(30). A multitude of metal layers(34,36,38) are formed on the oxide layer(32). A photo-resist(40) is formed on the metal layers(34,36,38) in order to form the metal layers(34,36,38) as predetermined patterns. The photo-resist(40) is used as an etching mask. The metal layers(34,36,38) are formed with an aluminium layer(34), a titanium layer(36), and a titanium nitride layer(38). The metal layers(34,36,38) are etched by using a mixed gas of an HCl3 gas and a Cl3 gas. An N2 gas can be used as an additional gas. An etch process is performed under a pressure of 3mTorr to 15mTorr and a temperature of 30 to 50 degrees centigrade.
|
