Field-effect semiconductor device

摘要

A field-effect semiconductor device including a channel layer (4); a contact layer (6); a semiconductor structure (5) having an electron-affinity different from those of the channel layer (4) and the contact layer (5) and formed between the channel layer (4) and the contact layer (5); an ohmic electrode (8,9) formed on the contact layer (6); and a Schottky electrode (10) formed on the semiconductor structure (5). The junction between the channel layer (4) and the semiconductor structure (5) and the junction between the contact layer (6) and the semiconductor structure (5) are isotype heterojunctions. <IMAGE>