发明名称 |
Manufacture of an integrated circuit isolation structure |
摘要 |
Disclosed are techniques to provide an integrated circuit, including the provision of improved integrated circuit isolation structures. The techniques include forming a number of trenches in an integrated circuit substrate to define a number of substrate regions that are to be electrically isolated from one another. A dielectric material is deposited in the trenches by exposure to a high density plasma having a first deposition-to-etch ratio. The high density plasma is adjusted to a second deposition-to-etch ratio greater than the first ratio to accumulate the dielectric material on the substrate after at least partially filling the trenches. A portion of the dielectric material is removed to planarize the workpiece. A number of components, such as insulated gate field effect transistors, may be subsequently formed in the substrate regions between the trenches. |
申请公布号 |
AU6785600(A) |
申请公布日期 |
2001.03.13 |
申请号 |
AU20000067856 |
申请日期 |
2000.08.18 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
RAMIRO SOLIS;HUNTER BRUGGE;MICHELA S. LOVE;BIJAN MOSLEHI;MILIND WELING |
分类号 |
H01L21/76;H01L21/31;H01L21/762 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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