发明名称 |
Method of forming an intermetal dielectric layer |
摘要 |
A method is used to form an intermetal dielectric layer. According to the invention, an unbiased-unclamped fluorinated silicate glass layer used as a protection layer is formed by high density plasma chemical vapor deposition on a biased-clamped fluorinated silicate glass layer formed by high density plasma chemical vapor deposition to prevent the biased-clamped fluorinated silicate glass layer from being exposed in a planarization process.
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申请公布号 |
US6200653(B1) |
申请公布日期 |
2001.03.13 |
申请号 |
US19990471055 |
申请日期 |
1999.12.22 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
TSAI CHENG-YUAN;LIU CHIH-CHIEN;YANG MING-SHENG |
分类号 |
H01L21/3105;H01L21/316;H01L21/768;(IPC1-7):H05H1/24 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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