SEMICONDUCTOR HETEROSTRUCTURES WITH CRYSTALLINE SILICON CARBIDE ALLOYED WITH GERMANIUM
摘要
A semiconductor heterostructure (a) is formed by mixing the elemental semiconductor germanium (Ge) with the compound semiconductor silicon carbide (SiC) to form an alloy of silicon carbide: germanium (SiC:Ge). The alloy (SiCGe) could be used alone or in multilayered structures with other semiconductors to improve the performance of electronic and optical devices and circuits.
申请公布号
WO0062331(A3)
申请公布日期
2001.03.08
申请号
WO2000US08671
申请日期
2000.03.31
申请人
UNIVERSITY OF DELAWARE;KOLODZEY, JAMES;KATULKA, GARY;GUEDJ, CYRIL