METHOD OF ETCHING AND METHOD OF PLASMA TREATMENT

摘要

Process gas consisting of CH2F2, O2 and Ar is introduced to a process chamber (102) of a plasma apparatus (100). The ratio of flow rates (in sccm) is CH2F2:O2:Ar = 20:10:100. The pressure in the process chamber (102) is set at 50 mTorr. High-frequency power of 500 W at 13.56 MHz is applied to a lower electrode (108) on which a wafer (W) is placed. The process gas then forms plasma and etches an SiNx layer (206) on a Cu layer (204). The Cu layer (204) exposed is hardly oxidized, and thus neither C nor F is implanted.