| 摘要 |
<p>A DRAM includes memory blocks (10) in a form of division of shared sense amplifier configuration in which sub arrays (11) and sense amplifiers (12) serving as cache memories are alternately arranged in the X direction of a memory chip. The memory blocks are arranged in the Y direction. Data lines are formed in parallel with the Y direction for the corresponding sub arrays, for transferring data held in the sense amplifiers corresponding to the sub arrays. I/O pads (16) are arranged in parallel with the X direction, for inputting/outputting data to/from the corresponding sub arrays via the data lines. When the shared sense amplifier configuration and sense amplifier cache system are achieved in a small area of the DRAM, the hit rate of the cache memories is increased, and data can be transferred at high speed by shortening data paths formed in the memory chip.</p> |
