发明名称 |
ZnO crystal growth method, ZnO crystal structure, and semiconductor device using ZnO crystal |
摘要 |
A ZnO crystal growing method having the steps of: growing a low temperature growth ZnO layer on a sapphire substrate at a temperature lower than a single crystal ZnO growth temperature; thermally processing the low temperature growth ZnO layer at a temperature near to a growth temperature of a high temperature growth single crystal ZnO layer higher than the growth temperature of the low temperature growth ZnO layer; and growing a high temperature growth single crystal ZnO layer on the low temperature growth ZnO layer at a temperature higher than the growth temperature of the low temperature growth ZnO layer. ZnO crystal of good quality with a reduced number of crystal defects can be grown on a sapphire substrate. |
申请公布号 |
EP1081256(A2) |
申请公布日期 |
2001.03.07 |
申请号 |
EP20000118859 |
申请日期 |
2000.08.31 |
申请人 |
STANLEY ELECTRIC CO., LTD.;YAO, TAKAFUMI |
发明人 |
SANO, MICHIHIRO;YAO, TAKAFUMI |
分类号 |
C30B23/02;H01L21/363;H01L21/365;H01L33/28 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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