Reduction of surface defects on amorphous silicon grown by a low-temperature, high pressure LPCVD process

摘要

A method is provided for depositing an amorphous silicon thin film on a substrate. The method is carried out in a reactor chamber and can be a LPCVD, PECVD or RTCVD process. The method comprises introducing a gas species into the reactor chamber for a time sufficient to dehydrate the substrate and to form a thin layer of silicon on the substrate. Following formation of the thin layer of silicon, a dopant gas is introduced into the reactor chamber to form the doped silicon thin film. The temperature and pressure within the chamber is set to minimize formation of surface irregularities or pits within the thin amorphous silicon layer.