| 摘要 |
A method for forming a dual polycide gate. A substrate that has an isolation structure is provided, a polysilicon layer (or an alpha-Si layer) is deposited over the substrate, N-type and P-type dopants are implanted into the polysilicon layer to form a dual gate having an N-type gate and a P-type gate. An annealing step is performed to restore the surface crystal structure of the polysilicon layer, an oxide layer is deposited on the doped polysilicon layer, and a silicide layer is formed over the oxide layer. The silicide layer, the oxide layer and the polysilicon layer are defined to form a polycide gate, a lightly doped source/drain region is formed beside the gate in the substrate. A spacer is formed on the sidewall of the gate, and a heavily doped source/drain region is formed beside the spacer in the substrate.
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