| 摘要 |
It has been difficult to form a high-frequency electronic circuit using a single-crystal dielectric substrate, and down-sizing of high-frequency electronic circuits is also difficult because of necessity of a metal housing. A high-frequency electronic device comprises a single-crystal dielectric substrate provided with a first ground conductor layer and a first wiring conductor layer constituting a high-frequency electronic circuit, a first dielectric substrate provided with a second ground conductor layer, the single-crystal dielectric substrate and the first dielectric substrate being made into contact with each other so that the top faces thereof form substantially the same plane, and a second dielectric substrate provided with a third ground conductor layer, the second dielectric substrate being attached to the top faces of the single-crystal dielectric substrate and the first dielectric substrate, wherein the first ground conductor layer is electrically connected with the second and third ground conductor layers, and the first wiring conductor layer is electrically connected with a second wiring conductor layer formed on the second dielectric substrate, and electrically connected with an external electric circuit via a second through conductor. A high-frequency electronic circuit excellent in characteristics can be obtained, and the down-sizing can be realized by eliminating a metal housing.
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