| 摘要 |
An electrostatic thermal bonding method for bonding a pair of glass substrates, is capable of solving the problems such as a contamination of a device and incomplete vacuum packaging due to gas generated during the bonding of glass substrates utilizing a conventional epoxy or frit. The electrostatic thermal bonding method uses a silicon-glass bonding mechanism. First, a silicon thin film is deposited on a metal thin film formed on a side of one glass substrate, and the two glass substrates are brought face to face with each other by bringing the silicon thin film into contact with the surface of the other glass substrate. A predetermined direct current voltage is applied between the metal thin film and the other glass substrate under a predetermined temperature, thereby the bonding between glass substrates is performed. In the glass-glass bonding method utilizing the silicon thin film, the direct current voltage in the range of 0 to 1000V is applied under a bonding temperature between 100 to 500° C. and the elements are combined between a surface of the glass and a surface of the silicon thin film. Therefore, such a bonding results in an improved bonding strength and an improved vacuum packaging.
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