| 摘要 |
PROBLEM TO BE SOLVED: To prevent a channel forming area from being irradiated with light or invaded by light by forming a source line, its extension wiring, or electrode over the channel forming area. SOLUTION: A thin film semiconductor 201 is formed on the surface of a glass substrate 200 and the active layer 202 of a thin film transistor is formed by patterning a silicon semiconductor thin film. Then a silicon oxide film 203 which becomes a gate insulating film is formed. In addition, polycrystalline silicon doped with a metal, such as the aluminum, etc., or phosphorus is formed and a gate electrode 107 is formed by patterning the polycrystalline silicon. At the time of forming the electrode 107, gate wiring is also formed simultaneously. Then a source 104 and a drain 106 are formed by implanting phosphorus ions. Thereafter, annealing is performed by laser beam irradiation. Finally, contact sections 108 and 109 are formed by forming a silicon oxide film as an interlayer insulating film and metallic wiring by patterning the silicon oxide film by punching. |
