| 摘要 |
A method for manufacturing a semiconductor device is provided to stably remove conductive residuals and to prevent a micro bridge between adjacent metal wires by performing an additional cleaning process after CMP processes are performed. Dielectrics(301,303) are formed on a substrate(300). Plural contact holes are formed in the dielectrics to contact to a lower layer. A metal layer is formed on the dielectrics to gap-fill the contact hole. The metal layer and the dielectrics are polished through a polishing process using a slurry to form an isolated metal layer in the contact hole. The slurry has polishing selectivity whose a polishing rate for the dielectrics is higher than the metal layer. The metal layer is comprised of tungsten, aluminum, or copper. The dielectric is formed with an oxide layer. The slurry is used with a silica abrasive. A particle size of the abrasive is 50 to 250 mm.
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