发明名称 |
Method for manufacturing integrated structures including removing a sacrificial region |
摘要 |
The method is based on the use of a silicon carbide mask for removing a sacrificial region. In case of manufacture of integrated semiconductor material structures, the following steps are performed: forming a sacrificial region of silicon oxide on a substrate of semiconductor material; growing a pseudo-epitaxial layer; forming electronic circuit components; depositing a silicon carbide layer; defining photolithographically the silicon carbon layer so as to form an etching mask containing the topography of a microstructure to be formed; with the etching mask, forming trenches in the pseudo-epitaxial layer as far as the sacrificial region so as to laterally define the microstructure; and removing the sacrificial region through the trenches.
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申请公布号 |
US6197655(B1) |
申请公布日期 |
2001.03.06 |
申请号 |
US19980113466 |
申请日期 |
1998.07.10 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
MONTANINI PIETRO;FERRERA MARCO;CASTOLDI LAURA;GELMI ILARIA |
分类号 |
H01L21/306;B81B3/00;B81C1/00;G01C19/56;G01L9/00;G01P15/08;G01P15/097;G01P15/10;G01P15/125;H01L21/762;H01L21/764;H01L49/00;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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