发明名称 |
Lightly nitridation surface for preparing thin-gate oxides |
摘要 |
A method for forming a dielectric layer upon a silicon layer. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate a silicon layer. There is then formed through use of a first plasma annealing method employing a nitrogen containing plasma annealing atmosphere a silicon nitride containing layer upon a partially consumed silicon layer derived from the silicon layer. There is then oxidized through use of a second thermal annealing method employing an oxidizing material containing atmosphere the silicon nitride containing layer to form an oxidized silicon nitride containing layer upon a further consumed silicon layer derived from the partially consumed silicon layer. The method is particularly useful for forming gate dielectric layers within field effect transistors (FETs).
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申请公布号 |
US6197701(B1) |
申请公布日期 |
2001.03.06 |
申请号 |
US19980177191 |
申请日期 |
1998.10.23 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
SHUE SHAU-LIN;TWU JIH-CHURNG |
分类号 |
H01L21/28;H01L21/314;H01L29/51;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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