| 摘要 |
PURPOSE: A method of producing a photomask having a minute pattern smaller than resolving power of an exposure apparatus and used for a thin film transistor substrate is provided to realize great precision and a minimized producing time. CONSTITUTION: The method includes exposing one region, where the minute pattern(P') smaller than resolving power of the exposure apparatus and a slit(S') adjacent to the minute pattern(P') are to be formed, separately from the other regions for data lines(162,165,166) by differentiating spot sizes. A data on the minute pattern forms the first file, and a data on the other pattern forms the second file. After a photoresist layer is coated over an opaque layer formed on a transparent substrate, the photoresist layer is subjected to the primary exposing step like the pattern data in the second file and then subjected to the secondary exposing step like the minute pattern data in the first file. The photoresist layer is then patterned and the underlying opaque layer is etched. In particular, an electron beam has a spot size of 0.2 micrometer or more for the primary exposing step, but another spot size of 0.125 micrometer and less for the secondary exposing step.
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