| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to realize a high integration of the device, by forming a storage electrode of a wrinkled surface with an electrode material of the capacitor such as a noble metal or metal oxide. CONSTITUTION: A substrate(11) which has many elements for forming a semiconductor device is provided, and a photoresist layer(16) is formed on the substrate. An exposure process is performed regarding a part of the photoresist layer. A standing wave is generated in the photoresist layer because of an interference phenomenon of incident light and reflected light so that an interface between portions regarding which an exposure process is performed and not performed has a wrinkled shape. The portion regarding which an exposure process is performed is eliminated, and a hole pattern whose inner sidewall is wrinkled is formed. After a conductive material layer(18) is formed on the photoresist layer having the hole pattern, the conductive material layer is left only in the hole pattern. The photoresist layer is removed to form a storage electrode having a wrinkled surface characteristic. A dielectric layer and a plate electrode are formed on the storage electrode.
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