SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device is provided to improve an insulating characteristic of a dielectric layer and to increase capacitance of a capacitor structure, by forming the dielectric layer by an atomic layer deposition method when a polysilicon layer is used as a storage electrode, and by forming a plate electrode with a material layer of which a work function is higher than the storage electrode. CONSTITUTION: The first electrode(31) is composed of a silicon-based material. Reaction materials are sequentially supplied to the surface of the first electrode to form a dielectric layer(37). The second electrode(39) is formed on the dielectric layer, and a work function of the second electrode is higher than the first electrode composed of the silicon-based material.