METHOD FOR MANUFACTURING SOLID STATE IMAGE DEVICE

摘要

PURPOSE: A method for manufacturing a solid state image device is provided to maximumly broaden a charge transfer region and a photodiode region by making a surface of a substrate rough, and to prevent a smear phenomenon by blocking light toward a side of a metal light blocking layer. CONSTITUTION: A local oxide layer having a constant interval is formed on a semiconductor substrate(31). The local oxide layer is eliminated to make the surface of the semiconductor substrate rough. A well region(33) is formed in the rough surface of the semiconductor substrate. Channel stop ions are implanted into the well region to form a channel stop layer(34) for electrically separating respective regions. A charge transfer region(35) is formed in a portion where a channel stop region is not formed in the well region. A photodiode region(37) is formed in the well region between the charge transfer region. A poly gate(39) corresponding to the charge transfer region is formed on the semiconductor substrate by intervening a gate insulating layer(38).