METHOD FOR MANUFACTURING SHALLOW-TRENCH-ISOLATION TYPE ISOLATING LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a shallow-trench-isolation(STI) type isolation layer of a semiconductor device is provided to prevent a blowing-up phenomenon of a nitride layer in a high temperature oxide process, by using a buffer layer composed of a nitride layer and an oxide layer which are formed in a trench. CONSTITUTION: A pad oxide layer and a pad nitride are sequentially stacked on a semiconductor substrate(10). After the pad nitride layer and the pad oxide layer are patterned by performing a photolithography process using an isolation mask, a trench is formed in the substrate to a predetermined depth. A nitirde layer and an oxide layer are sequentially deposited in the trench to form a multilayered buffer layer for reducing stress of the substrate of the trench and a gap fill oxide layer(22) to be formed later. After the gap fill oxide layer is filled and planarized in the trench of the substrate having the buffer layer, the pad nitride layer is eliminated to form an isolation layer.