发明名称 |
Semiconductor image sensor used as a CMOS sensor comprises a semiconductor substrate, a photodiode, transistor, insulating layer and an optical layer |
摘要 |
Semiconductor image sensor comprises a semiconductor substrate (210) which is divided into a light determining region and a periphery switching region; a photodiode (220) provided above the light determining region (212); at least one transistor (230) provided above the periphery switching region (214); at least one insulating layer (240) provided above the diode and the transistor; and an optical layer (270) on the insulating layer to efficiently transfer light to the photodiode. Preferred Features: The optical layer is made of tetraethoxyorthosilicate and is formed by PECVD process.
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申请公布号 |
DE10031439(A1) |
申请公布日期 |
2001.03.01 |
申请号 |
DE20001031439 |
申请日期 |
2000.06.28 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
PARK, KI-NAM |
分类号 |
H01L27/14;G01J1/02;H01L27/146;H01L31/10;H04N5/335;H04N5/369;H04N5/374;(IPC1-7):H01L27/146 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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