发明名称 |
Semiconductor device having contact hole and method of manufacturing the same |
摘要 |
A semiconductor device is obtained which allows a simpler formation process of a capacitor contact hole and reduction in capacitance between bit interconnections. A first capacitor contact hole is formed in a silicon nitride film and an interlayer insulating film in which a bit line contact hole is formed. The first capacitor contact hole is filled with a plug electrode having its top surface area larger than its bottom surface area. A capacitor lower electrode is formed to be connected to the top surface of the plug electrode and to cover the side and top surfaces of a bit line with a sidewall oxide film and a TEOS oxide film located therebetween.
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申请公布号 |
US6194757(B1) |
申请公布日期 |
2001.02.27 |
申请号 |
US19970975160 |
申请日期 |
1997.11.20 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
SHINKAWATA HIROKI |
分类号 |
H01L23/522;H01L21/768;H01L21/8242;H01L27/108;H01L29/78;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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