| 摘要 |
PROBLEM TO BE SOLVED: To enable a large-scale waver of radius 8 inches or above to undergo a hydrogen sintering processing without deteriorating a MOS semiconductor device in characteristics so as to enhance its throughput. SOLUTION: Wafers where MOS-type semiconductor devices are formed are introduced into a sheet-type thermal treatment device piece by piece. In a hydrogen sintering processing, hydrogen is introduced into the thermal treatment device, the wafer is raised in temperature and kept at a constant temperature (step ST1), and when the wafer gets higher than a certain temperature, it is subjected to a hydrogen sintering processing (step ST2), and then the wafer is decreased to a prescribed temperature in the thermal treatment device (step ST3). Thereafter, the wafer is taken out from the thermal treatment device (step ST4). A single sintering processing can be finished within three minutes, so that this sintering method can be more enhanced in throughput than a conventional diffusion oven treatment, and a wafer can be more improved in temperature responsibility and temperature uniformity. After a wafer is subjected to a sintering processing, it is cooled down and taken out from the thermal treatment device, by which the wafer is capable of recovering from its damage on a MOS interface level in a preceding process. |
