| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory which can be improved in service life, lowered in operating voltage, enhanced in operation speed, lessened in power consumption, and enhanced in degree of integration. SOLUTION: This semiconductor memory is equipped with an N-type source region 3 and an N-type drain region 4 which are formed on a P-type single crystal silicon substrate 2, a control gate electrode 7 and a floating gate electrode 11 formed between the source region 3 and the drain region 4 as self- aligned with them, an intergate 9 of N-type semiconductor film formed between the control gate electrode 7 and the floating gate electrode 11, a first tunnel insulating film 8 provided between the control gate electrode 7 and the N-type intergate 9, and a second tunnel insulating film 10 which is formed between the N-type intergate 8 and the floating gate electrode 11. A prescribed potential difference is produced between the drain region 4 and the source region 3, by which electrons are moved from the control gate electrode 7 to the N-type intergate 9 and furthermore accelerated to be injected into the floating gate electrode 11.
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