| 摘要 |
An index optical waveguide semiconductor laser is formed by a lower clad layer, a lower optical waveguide layer, an active layer, an upper optical waveguide layer and an upper clad layer superposed one on another in this order on a GaAs substrate. Each of the upper and lower clad layers and the upper and lower optical waveguide layers is of a composition which matches with the GaAs substrate in lattice. The upper optical waveguide layer is formed by an Inx2(Alz2Ga1-z2)1-x2As1-y2Py2 (1>=y2>=0.8) optical waveguide layer and a Ga1-z1Alz1As optical waveguide layer formed on the upper surface of the Inx2(Alz2Ga1-z2)1-x2As1-y2Py2 optical waveguide layer. The difference in the refractive index to light at the oscillation wavelength of the semiconductor laser between the Inx2(Alz2Ga1-z2)1-x2As1-y2Py2 optical waveguide layer and the Ga1-z1Alz1As optical waveguide layer is not larger than 2% of the larger of the refractive indexes of the optical waveguide layers.
|
