发明名称 METHOD OF PREPARING SILICON CARBIDE
摘要 chemical industry, more particularly preparation of abrasive and refractory materials. SUBSTANCE: shungite in graphite crucibles is placed into vacuum furnace, heated to 1600-1800 C at heating rate of 200-300 C/h at residual pressure of 0.25-1.3 kPa, kept at temperature indicated above for 1-2 h, and above-indicated residual pressure remains unchanged. Electric power consumption is 18.4-kWh/1 kg of SiC. Abrasive power of SiC grains is 0.0925 units. Method is simple and efficient. EFFECT: more efficient preparation method. 2 cl, 1 ex
申请公布号 RU2163563(C1) 申请公布日期 2001.02.27
申请号 RU19990117599 申请日期 1999.08.18
申请人 ZAO NPP "SHUNGITOVYE TEKHNOLOGII" 发明人 TUKTAMYSHEV I.I.;SELEZNEV A.N.;KALININ JU.K.;TUKTAMYSHEV I.SH.;GNEDIN JU.F.;SHERRJUBLE V.G.
分类号 C01B31/36 主分类号 C01B31/36
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