| 摘要 |
In a method for manufacturing a semiconductor device, a first insulating layer is formed on a semiconductor substrate, and a gate electrode is formed on the first insulating layer. Then, a second insulating layer is formed over the gate electrode. The second insulating layer has a high ability to stop the diffusion of hydrogen atoms therethrough. Then, hydrogen passivation is performed upon an interface between the semiconductor substrate and the first insulating layer at a first temperature. Then, a metal wiring layer is formed over the insulating layer, and the metal wiring layer is heated at a second temperature lower than the first temperature.
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